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| (R) STTH3L06 TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM IR (max) Tj (max) VF (max) trr (max) FEATURES AND BENEFITS s s 3A 600 V 100 A 175 C 1.05 V 85 ns s s Ultrafast switching Low reverse recovery current Reduces switching & conduction losses Low thermal resistance DO-201AD STTH3L06 DESCRIPTION The STTH3L06, which is using ST Turbo 2 600V technology, is specially suited as boost diode in discontinuous or critical mode power factor corrections. The device is also intended for use as a free wheeling diode in power supplies and other power switching applications. ABSOLUTE RATINGS (limiting values) Symbol VRRM IF(RMS) IF(AV) IFSM Tstg Tj Parameter Repetitive peak reverse voltage RMS forward current Average forward current Surge non repetitive forward current Storage temperature range Maximum operating junction temperature Tl = 100C tp = 10 ms =0.5 Sinusoidal Value 600 20 3 80 - 65 + 175 + 175 Unit V A A A C C October 2001 - Ed: 1A 1/5 STTH3L06 THERMAL PARAMETERS Symbol Rth (j-l) Rth (j-a) Junction to lead Junction to ambient (note 1) Parameter L = 10 mm L = 10 mm Maximum 20 75 Unit C/W Note 1: With recommended pad layout (see Fig 12) STATIC ELECTRICAL CHARACTERISTICS Symbol IR Parameter Reverse leakage current Forward voltage drop Tests conditions VR = 600V Tj = 25C Tj = 150C IF = 3 A Tj = 25C Tj = 150C To evaluate the maximum conduction losses use the following equation : P = 0.89 x IF(AV) + 0.055 IF2(RMS) 0.85 15 Min. Typ. Max. 3 100 1.3 1.05 V Unit A VF DYNAMIC ELECTRICAL CHARACTERISTICS Symbol trr tfr VFP Parameter Reverse recovery time Forward recovery time Forward recovery time Tests conditions IF = 1 A dIF/dt = - 50 A/s VR = 30V IF = 3 A dIF/dt = 100 A/s VFR = 1.1 x VFmax IF = 3 A dIF/dt = 100 A/s Tj = 25C Tj = 25C Tj = 25C Min. Typ. 60 Max. 85 100 7.5 Unit ns ns V 2/5 STTH3L06 Fig. 1: Conduction losses versus average current. P(W) 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 T Fig. 2: Forward voltage drop versus forward current. IFM(A) 100.0 = 0.05 = 0.1 = 0.2 = 0.5 Tj=150C (Maximum values) =1 10.0 Tj=150C (Typical values) Tj=25C (Maximum values) 1.0 IF(av)(A) =tp/T 3.5 tp VFM(V) 0.1 4.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Fig. 3: Relative variation of thermal impedance junction ambient versus pulse duration (epoxy FR4, Leads = 10mm) Zth(j-a)/Rth(j-a) 1.0 0.9 0.8 0.7 0.6 = 0.5 Fig. 4: Peak reverse recovery current versus dIF/dt (90% confidence). IRM(A) 3.5 VR=400V Tj=125C 3.0 2.5 2.0 IF=0.25 x IF(av) IF=0.5 x IF(av) IF=IF(av) IF=2 x IF(av) 0.5 0.4 0.3 0.2 0.1 = 0.2 = 0.1 Single pulse 1.5 1.0 T 0.5 tp(s) 1.E+00 1.E+01 0.0 1.E-01 =tp/T 1.E+02 tp dIF/dt(A/s) 0.0 0 5 10 15 20 25 30 35 40 45 50 1.E+03 Fig. 5: Reverse recovery time versus dIF/dt (90% confidence). trr(ns) 1000 900 800 700 600 500 400 300 200 100 0 0 5 10 15 20 25 30 35 40 45 50 IF=2 x IF(av) VR=400V Tj=125C Fig. 6: Reverse recovery charges versus dIF/dt (90% confidence). Qrr(nC) 350 VR=400V Tj=125C IF=2 x IF(av) 300 250 200 IF=IF(av) IF=0.5 x IF(av) IF=IF(av) IF=0.5 x IF(av) 150 100 50 dIF/dt(A/s) 0 0 5 10 15 dIF/dt(A/s) 20 25 30 35 40 45 50 3/5 STTH3L06 Fig. 7: Softness factor versus dIF/dt (typical values). S factor 2.0 1.8 1.6 1.4 IRM Fig. 8: Relative variations of dynamic parameters versus junction temperature. 1.25 IF=IF(av) VR=400V Tj=125C S factor 1.00 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 5 10 15 20 25 30 35 40 45 50 0.75 QRR 0.50 0.25 dIF/dt(A/s) Tj(C) 0.00 25 50 75 IF=IF(av) VR=400V Reference: Tj=125C 100 125 Fig. 9: Transient peak forward voltage versus dIF/dt (90% confidence). VFP(V) 15.0 IF=IF(av) Tj=125C Fig. 10: Forward recovery time versus dIF/dt (90% confidence). tfr(ns) 200 180 160 140 IF=IF(av) VFR=1.1 x VF max. Tj=125C 12.5 10.0 120 7.5 100 80 5.0 60 40 2.5 dIF/dt(A/s) 0.0 0 20 40 60 80 100 120 140 160 180 200 20 0 0 20 40 60 dIF/dt(A/s) 80 100 120 140 160 180 200 Fig. 11: Junction capacitance versus reverse voltage applied (typical values). C(pF) 100 F=1MHz Vosc=30mV Tj=25C Fig. 12: Thermal resistance junction to ambient versus copper surface under each lead (Epoxy printed circuit board FR4, copper thickness: 35m) Rth(j-a) (C/W) 80 70 60 50 L lead=10mm 10 40 30 20 VR(V) 10 0 100 1000 S(cm) 0 1 2 3 4 5 6 7 8 9 10 1 1 10 4/5 STTH3L06 PACKAGE MECHANICAL DATA DO-201AD B A B OC note 1 E E note 1 OD OD note 2 DIMENSIONS REF. A B C D E 25.40 5.30 1.30 1.25 Millimeters Min. Max. 9.50 Inches Min. 1.000 0.209 0.051 0.049 NOTES 1 - The lead diameter D is not controlled over zone E 2 - The minimum length which must stay straight between the right angles after bending is 0.59"(15 mm) Max. 0.374 Ordering code STTH3L06 STTH3L06RL s s Marking STTH3L06 STTH3L06 Package DO-201AD DO-201AD Weight 1.12 g 1.12 g Base qty 600 1900 Delivery mode Ammopack Tape & reel s Epoxy meets UL 94,V0 Band indicated cathode Bending mehtod: Application note AN1471 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 2001 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia -Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. 5/5 |
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